code-stm32读写FLASH

#define FLASH_TYPEERASE_PAGES		( (uint32_t) 0x00)      /*!<Pages erase only*/
#define FLASH_TYPEERASE_MASSERASE	( (uint32_t) 0x02)      /*!<Flash mass erase activation*/
#define FLASH_BANK_1			( (uint32_t) 0)         /*!< Bank 1   */
#define FLASH_TYPEPROGRAM_HALFWORD	( (uint32_t) 0x01)      /*!<Program a half-word (16-bit) at a specified address.*/

u16 u8ConvertU16( u8 a,u8 b )
{
	u16 res = a << 8 | b;
	return(res);
}


void erasePage( u32 pageStartAddress,u32 pageNum )
{
	FLASH_EraseInitTypeDef	eraseInit;
	u32			error;
	eraseInit.TypeErase = FLASH_TYPEERASE_PAGES;
	/* eraseInit.Banks = FLASH_BANK_1; */
	eraseInit.NbPages	= pageNum;
	eraseInit.PageAddress	= pageStartAddress;
	if ( HAL_FLASHEx_Erase( &eraseInit,&error ) == HAL_OK )
	{
	}
}


u32 writeFlash( u8 *pSourceData,u32 targetAddress,u32 len )
{
	HAL_FLASH_Unlock();
	u32 writeData;
	for ( u32 i = 0; i < len; i = i + 2 )
	{
		if ( targetAddress % 1024 == 0 )
		{
			erasePage( targetAddress,1 );
		}
		writeData = u8ConvertU16( pSourceData[i + 1],pSourceData[i] );
		if ( HAL_FLASH_Program( FLASH_TYPEPROGRAM_HALFWORD,targetAddress,writeData ) != HAL_OK )
		{
		}
		targetAddress += 2;
	}
	HAL_FLASH_Lock();
	return(targetAddress);
}


u32 writeU16ToFlash( u16* pSourceData,1 );
		}
		writeData = (*pSourceData) & 0xffff;
		if ( HAL_FLASH_Program( FLASH_TYPEPROGRAM_HALFWORD,writeData ) != HAL_OK )
		{
		}
		targetAddress += 2;
	}
	HAL_FLASH_Lock();
	return(targetAddress);
}



示例：


#define USER_DATA_BASE 0x800A000 

void setLevelValue( u8 level,u8* u8Arr )
{
	u8	page[1024]	= { 0 };
	u8	i		= 0;

	/* 拷贝值 */
	for ( i = 0; i < 16; i++ )
	{
		page[i] = *(u32 *) (USER_DATA_BASE + i) & 0xff;
	}

	erasePage( USER_DATA_BASE,1 );

	writeFlash( page,USER_DATA_BASE,16 );

	__set_FAULTMASK( 1 );
	NVIC_SystemReset();
}