MLC（Multi-Level-Cell）技术，由英特尔于1997年率先推出，能够让单个存储单元保存两倍的数据量。MLC内存颗粒是个相当良好的低价解决方案，可大幅节省制造商端的成本，但是MLC NAND颗粒制成的CompactFlash卡相较于SLC（Single-Lecel_Cell） 内存颗粒的产品有着写入速度慢、耗电多、寿命短的缺点，MLC颗粒制成的产品只有10X（1.5Mbyte/sec）的写入速度，SLC 颗粒制成的产品可以达到 22X（3.2Mbyte/sec）的写入速度。Intel 在1997年9月最先开发成功，能够让单个存储单元保存两倍的数据量；
SLC 与 MLC 的参数对比： Item SLC MLC
电压 3.3V/1.8V 3.3V
生产工艺 / 芯片尺寸 0.12um 0.16um
页容量 / 块容量 2KB/128KB 512KB/32KB or 2KB/256KB
访问时间（最大） 25us 70us
页编程时间（典 型） 250us 1.2ms
可否局部编程 Yes No
擦写次数 100K 10K
数据写入速率 8MB/S+ 1.5MB/S
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二是看FLASH型号，如果是采用三星闪存、型号以K9G或K9L开头则是MLC，如果采用现代闪存HYUU或HYUV也是MLC
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| Brand |
Cell |
Page |
Part Number |
Capacity |
| Samsung |
SLC |
Small Block |
K9F1208U0M-Y,P |
64MB |
| K9F1208U0A-Y,P |
64MB |
| K9F1208U0A-V,F |
64MB |
| K9F1208U0B-Y,P |
64MB |
| K9F1208U0B-V,F |
64MB |
| K9F1208U0A-YCB0 |
128MB |
| K9K1G08U0M-Y |
128MB |
| K9K1G08U0A-Y,P |
128MB |
| K9K1G08U0A-V,F |
128MB |
| K9T1G08U0M-Y,P |
128MB |
| K9T1G08U0M-V,F |
128MB |
| K9T1G08B0M-Y,P |
128MB |
| K9T1G08B0M-V,F |
128MB |
| K9E2G08U0M-Y,P |
256MB |
| K9E2G08U0M-V,F |
256MB |
| Large Block |
K9F1G08U0M-Y,P |
128MB |
| K9F1G08U0M-V,F |
128MB |
| K9F1G08U0A-Y,P |
128MB |
| K9F1G08U0A-V,F |
128MB |
| K9F1G16U0M |
128MB |
| K9K2G08U0M-Y,P |
256MB |
| K9K2G08U0M-V,F |
256MB |
| K9F2G08U0M-Y,P |
256MB |
| K9K4G08U0M-Y,P |
512MB |
| K9W8G08U1M-Y,P |
1GB |
| K9F4G08U0M-Y,P |
512MB |
| K9K8G08U0M-Y,P |
1GB |
| K9F4G08U0A |
512MB |
| K9K8G08U0A |
1GB |
| K9WAG08U1M |
2GB |
| MLC |
Small Block |
|
|
| |
|
| Large Block |
K9G4G08U0M-YCB0 |
512MB |
| K9L8G08U0M-PCB0 |
1GB |
| K9HAG08U1M-PCB0 |
2GB |
| Toshiba |
SLC |
Small Block |
TC58512FT |
64MB |
| TC58DVM92A1FT |
64MB |
| TH58100FT |
128MB |
| TC58DVG02A1FT |
128MB |
| TC58DVG04B1FTI0 |
128MB |
| TC58DVG14B1FT00 |
256MB |
| TC58DVG02A1FT00 |
|
| TC58DVG02A2FT00 |
128MB |
| Large Block |
TC58NVG0S3AFT |
128MB |
| TH58NVG1S3AFT |
256MB |
| TC58NVG1S3BFT00 |
256MB |
| TH58NVG2S3BFT00 |
512MB |
| MLC |
Small Block |
|
|
| |
|
| Large Block |
TC58NVG1D4BTG00 |
256MB |
| TC58NVG2D4BTG00 |
512MB |
| TH58NVG3D4BTG00 |
1GB |
| TH58NVG4D4BTG20 |
2GB |
| TC58NVG2D4BFT00 |
512MB |
| TC58NVG3D4CTG00 |
1GB |
| TC58NVG4D4CTG00 |
2GB |
| Renasas |
AG-AND |
|
HN29V1G91T-30V |
128MB |
| |
|
| |
|
| Infineon |
|
|
|
|
| |
|
| |
|
| SanDisk |
SLC |
Large Block |
SDTNGEHE0-1024 |
128MB |
| SDTNGEFE0-2048 |
256MB |
| MLC |
Small Block |
SDTNGCHE0-512 |
64MB |
| SDTNGCHE0-1024 |
128MB |
| SDTNGCHE0-2048 |
256MB |
| Hynix |
SLC |
Small Block |
HY27US08121M-T,V |
64MB |
| HY27UA081G1M-T,V |
128MB |
| Large Block |
HY27UF081G2M-T,V |
128MB |
| HY27UF082G2M |
256MB |
| HY27UG082G2M-T,V |
256MB |
| HY27UG084G2M |
512MB |
| HY27UH084G2M-T |
512MB |
| HY27UF084G2M |
512MB |
| HY27UG088G5M |
1GB |
| HY27UH08AG5M |
2GB |
| HY27UH088G2M |
1GB |
| MLC |
|
HY27UT084G2M |
512MB |
| HY27UU088G5M |
1GB |
| ST |
SLC |
Small Block |
NAND128W3A |
16MB |
| NAND256W3A |
32MB |
| NAND512W3A |
64MB |
| NAND01GW3A |
128MB |
| Large Block |
NAND512W3B |
64MB |
| NAND01GW3B |
128MB |
| NAND02GW3B2AN6 |
256MB |
| NAND02GW3B2BN6 |
256MB |
| NAND04DW3B |
512MB |
| NAND08GW3B |
1024MB |
| MLC |
Small Block |
|
|
| |
|
| Large Block |
|
|
| |
|
| Micron |
SLC |
Small Block |
|
|
| |
|
| |
|
| Large Block |
MT29F2G08AAB |
256MB |
| MT29F4G08BAB |
512MB |
| MT29F8G08FAB |
1GB |
| MT29F2G08AAC |
256MB |
| MT29F4G08AAA |
512MB |
| MLC |
Small Block |
|
|
| |
|
| Large Block |
