NAND FLASH MEMORY K9F1216U0A

Samsung 64M x 8 Bit,32M x 16 Bit NAND Flash Memory

Offered in 64Mx8bit or 32Mx16bit,the K9F12XXU0A is 512M bit with spare 16M bit capacity. The device is offered in 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200|ìs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms
on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8 device) or
word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control
automates all program and erase functions including pulse repetition,where required,and internal verification and margining of
data. Even the write-intensive systems can take advantage of the K9F12XXU0A??s extended reliability of 100K program/erase cycles
by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F12XXU0A is an optimum solution for large
nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

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技术特征：

1. Voltage Supply
   1. -2.7 ~ 3.6 V
2. Organization
   1. Memory Cell Array
      1. X8 device(K9F1208U0A) : (64M + 2048K)bit x 8 bit
      2. X16 device(K9F1216U0A) : (32M + 1024K)bit x 16bit
   2. Data Register
      1. X8 device(K9F1208U0A) : (512 + 16)bit x 8bit
      2. X16 device(K9F1216U0A) : (256 + 8)bit x16bit
3. Automatic Program and Erase
   1. Page Program
      1. X8 device(K9F1208U0A) : (512 + 16)Byte
      2. X16 device(K9F1216U0A) : (256 + 8)Word
   2. Block Erase :
      1. X8 device(K9F1208U0A) : (16K + 512)Byte
      2. X16 device(K9F1216U0A) : ( 8K + 256)Word
4. Page Read Operation
   1. Page Size
      1. X8 device(K9F1208U0A) : (512 + 16)Byte
      2. X16 device(K9F1216U0A) : (256 + 8)Word
   2. Random Access : 12μs(Max.)
   3. Serial Page Access : 50ns(Min.)
5. Fast Write Cycle Time
   1. Program time : 200μs(Typ.)
   2. Block Erase Time : 2ms(Typ.)
6. Command/Address/Data Multiplexed I/O Port
7. Hardware Data Protection
   1. Program/Erase Lockout During Power Transitions
8. Reliable CMOS Floating-Gate Technology
   1. Endurance : 100K Program/Erase Cycles
   2. Data Retention : 10 Years
9. Command Register Operation
10. Intelligent Copy-Back
11. Unique ID for Copyright Protection
12. Package
    1. K9F12XXU0A-YCB0/YIB0
       1. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
    2. K9F1208U0A-VCB0/VIB0
       1. 48 - Pin WSOP I (12X17X0.7mm)
    3. K9F12XXU0A-PCB0/PIB0
       1. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
    4. K9F1208U0A-FCB0/FIB0
       1. 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
    5. K9F1208U0A-V,F(WSOPI ) is the same device as
    6. K9F1208U0A-Y,P(TSOP1) except package type.